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Advance Product Information
April 11, 2006
800 - 3000MHz High IP3 Dual LNA
* * * * *
TGA2602-SM
Key Features and Performance
800 - 3000 MHz Frequency Range <0.6 dB Noise Figure 22dB Gain Bias Conditions: 4V/100mA Package Dimensions: 2.0 x 2.0 x 0.9 mm Wireless Basestation WiMAX
Primary Applications Product Description
The TriQuint TGA2602-SM is a packaged low noise amplifier. The TGA2602-SM operates from 800 - 3000 MHz. The TGA2602-SM typically provides <0.6dB noise figure with a small signal gain of >19 dB at 1950MHz. The TGA2602-SM is available in a lowcost, surface mount 6 lead 2x2 QFN style package and is ideally suited for wireless basestation and WiMAX applications. Balanced Evaluation Boards are available upon request. Lead-free and RoHS compliant.
S21 (dB) NF (dB)
* *
Measured Data
Balanced Amplifier Data Vd=4V Id=100mA
1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.75 30 25 20 15 10 5 0
900MHz Balanced 1950MHz Balanced
900MHz Balanced 900MHz Balanced (De-embedded Hybrids) 1950MHz Balanced 1950MHz Balanced (De-embedded Hybrids)
1
1.25
1.5 1.75 Frequency (GHz)
2
2.25
2.5
1.5 1.8 2.0 2.3 2.5 2.8 3.0 Frequency (GHz) Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to change without notice.
1
0.8
1.0
1.3
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Advance Product Information
April 11, 2006
TGA2602-SM
TABLE I MAXIMUM RATINGS Symbol V I
+ -
Parameter Positive Supply Voltage Negative Supply Voltage Positive Supply Current (per channel) Negative Supply Current (per channel) Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (10 Seconds) Storage Temperature
Value 5V -1V to 0.5V 100 mA 5 mA TBD TBD 150 C 260 C -65 to 150 0C
0 0
Notes 1/ 2/ 1/ 1/ 2/ 1/ 1/ 2/ 1/ 2/ 3/ 4/
V
+ -
|I | PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 80C When operated at this bias condition with a baseplate temperature of 80C, the MTTF is reduced Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II THERMAL INFORMATION Parameter RJC Thermal Resistance (Channel to Backside of Package) Test Conditions VD = 3.5V ID = 100mA PDISS = 0.35W TBASE = 70C TCH (C) 97 RJC (C/W) 48.6 MTTF (hrs) 1E+6
Note: Thermal transfer is conducted through the bottom of the TGA2602-SM package into the motherboard.
2
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Advance Product Information
April 11, 2006
TABLE IIIA - 900MHz Balanced Amplifier RF CHARACTERIZATION TABLE (TA = 25C, Nominal) Vd=4V, Id=100mA Parameter Small Signal Gain Input Return Loss Output Return Loss Noise Figure Input Third Order Intercept Test Conditions Typ Units
TGA2602-SM
Notes
850 - 900 MHz
26
dB
850 - 900 MHz
27
dB
850 - 900 MHz
25
dB
850 - 900 MHz
0.75
dB
850 - 900 MHz
5
dBm
TABLE IIIB - 1950MHz Balanced Amplifier RF CHARACTERIZATION TABLE (TA = 25C, Nominal) Vd=4V, Id=100mA Parameter Small Signal Gain Input Return Loss Output Return Loss Noise Figure Input Third Order Intercept Test Conditions Typ Units Notes
1950 MHz
19.5
dB
1950 MHz
16
dB
1950 MHz
25
dB
1950 MHz
0.65
dB
1950 MHz
13.5
dBm
3
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
TGA2602-SM Single Channel 1950MHz Application Circuit
26 24 22 20 S21 (dB) 18 16 14 12 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 -15 0 0.5 1 1.5 2 Frequency (GHz) 0.5 1 1.5 2 Frequency (GHz) 2.5 3
4V 50mA (Refer to Page 17)
S21 S12
0 -5 -10 -15 -20 -25 -30 -35 -40 S12 (dB)
S11,S22 (dB)
S11 S22 2.5 3
4
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
TGA2602-SM Single Channel 1950MHz Application Circuit
2 1.8 1.6 1.4 NF (dB) 1.2 1 0.8 0.6 0.4 0.2 0 0 18 16 14 12 IIP3 (dBm) 10 8 6 4 2 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Frequency (GHz) 2.4 2.6 2.8 3.0 3.2 0.5 1 1.5 Frequency (GHz) 2 2.5 3
4V 50mA (Refer to Page 17)
5
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
TGA2602-SM Single Channel 1950MHz Application Circuit
20
4V 50mA (Refer to Page 17)
0.8 GHz 1.2 GHz 1.6 GHz 2.0 GHz 2.4 GHz 2.8 GHz
15
IIP3 (dBm)
10
5
0
-5 -35 22 21 P1dB,Psat (dBm) 20 19 18 17 16 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 Frequency (GHz) 2.5 2.7 2.9 3.1 P1dB Psat -30 -25 -20 -15 -10 Input Power/Tone (dBm) -5 0 5
6
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
900MHz Balanced Amplifier Circuit
4V 100mA (Refer to Page 19)
30 25 20 S21 (dB) 15 10 5 0 0 0 -5 -10 -15 -20 -25 -30 0 0.25 0.5 0.75 1 1.25 1.5 Frequency (GHz) 1.75 2 0.25 0.5 0.75 1 1.25 1.5 Frequency (GHz) 1.75 2 2.25
TGA2602-SM
10 S21 S12 0 -10 -20 -30 -40 -50 2.5 S12 (dB)
S11,S22 (dB)
S11 S22
2.25
2.5
7
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
900MHz Balanced Amplifier Circuit
4V 100mA (Refer to Page 19)
2 1.8 1.6 1.4 NF (dB) 1.2 1 0.8 0.6 0.4 0.2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
TGA2602-SM
2.25
2.5
Frequency (GHz) 10 9 8 7 IIP3 (dBm) 6 5 4 3 2 1 0 0.65 0.7 0.75 0.8 0.85 0.9 0.95 Frequency (GHz) 1 1.05 1.1 1.15
8
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Advance Product Information
April 11, 2006
900MHz Balanced Amplifier Circuit
10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -40 24 23.5 23 P1dB,Psat (dBm) 22.5 22 21.5 21 20.5 20 0.65 -35
TGA2602-SM
4V 100mA (Refer to Page 19)
0.8 GHz 0.85 GHz 0.9 GHz
IIP3 (dBm)
-30
-25 -20 -15 -10 Input Power/Tone (dBm)
-5
0
5
P1dB Psat
0.7
0.75
0.8
0.85 0.9 0.95 Frequency (GHz)
1
1.05
1.1
1.15
9
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
1950MHz Balanced Amplifier Circuit
4V 100mA (Refer to Page 20)
30 25 20 S21 (dB) 15 10 5 0 0 0 -5 -10 -15 -20 -25 -30 0 0.25 0.5 0.75 1 1.25 1.5 Frequency (GHz) 1.75 2 0.25 0.5 0.75 1 1.25 1.5 Frequency (GHz) 1.75 2 2.25
TGA2602-SM
10
S21 S12
0 -10 -20 -30 -40 -50 2.5 S12 (dB)
S11 S22
S11,S22 (dB)
2.25
2.5
10
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
1950MHz Balanced Amplifier Circuit
4V 100mA (Refer to Page 20)
2 1.8 1.6 1.4 NF (dB) 1.2 1 0.8 0.6 0.4 0.2 0 0 17 16 15 IIP3 (dBm) 14 13 12 11 10 1.75 0.25 0.5 0.75 1 1.25 1.5 Frequency (GHz) 1.75 2
TGA2602-SM
2.25
2.5
1.8
1.85
1.9
1.95 2 2.05 Frequency (GHz)
2.1
2.15
2.2
2.25
11
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
1950MHz Balanced Amplifier Circuit
20 18 16 14 IIP3 (dBm) 12 10 8 6 4 2 0 -30 23 22.5 22 P1dB,Psat (dBm) 21.5 21 20.5 20 19.5 19 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 Frequency (GHz) 2.15 2.2 -25 -20 -15 -10 -5 Input Power/Tone (dBm) 0
1.9 GHz 1.95 GHz 2 GHz
TGA2602-SM
4V 100mA (Refer to Page 20)
5
P1dB Psat
2.25
2.3
12
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
April 11, 2006
Package S-Parameters
4V 50mA
Freq 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 12
TGA2602-SM
S11mag S11ang S21Mag S21Ang S12Mag S12Ang S22Mag S22Ang 0.954 -37.26 16.273 152.65 0.024 67.71 0.315 -42.03 0.873 -75.01 14.862 126.55 0.045 46.61 0.32 -83.94 0.812 -108.98 12.833 104.16 0.059 29.33 0.325 -118.8 0.764 -140.5 10.831 84.13 0.067 14.77 0.315 -148.91 0.72 -166.36 8.942 67.36 0.07 3.91 0.296 -174.63 0.728 172.09 7.598 52.21 0.072 -8.36 0.296 159.51 0.739 154.15 6.516 38.58 0.075 -17.56 0.309 139.75 0.748 139.42 5.792 25.59 0.08 -24.69 0.346 128.19 0.731 125.28 5.438 12.76 0.08 -35.53 0.368 115.45 0.704 107.03 4.934 -1.21 0.084 -47.45 0.414 101.4 0.633 88.38 4.256 -18.11 0.079 -60.93 0.508 92 0.52 70.65 3.445 -33.7 0.066 -79.86 0.589 80.89 0.437 49.7 2.817 -44.76 0.058 -76.88 0.615 66.94 0.343 25.91 2.198 -54.88 0.047 -82.13 0.632 56.78 0.371 16.85 1.928 -59.39 0.057 -70.57 0.616 47.97 0.36 4.5 1.634 -64.52 0.059 -82.19 0.638 42.59 0.55 10.56 1.669 -69.29 0.048 -82.8 0.659 35.1 0.632 0.45 1.505 -78.54 0.07 -90.11 0.649 28.92 0.716 -5.53 1.328 -86.54 0.078 -107.09 0.666 20.26 0.751 -8.7 1.21 -88.2 0.077 -124.58 0.627 12.76 0.815 -11.2 1.174 -95.35 0.058 -146.77 0.648 6.67 0.869 -15.32 1.103 -104.6 0.049 -137.66 0.657 0.35 0.709 -13.72 1.127 -98.86 0.056 -134.9 0.673 -5.53 0.867 -11.72 1.188 -118.37 0.057 -144.64 0.692 -13.25
13
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April 11, 2006
Package Pinout Diagram
TGA2602-SM
26 02
Top View
Dot indicates Pin 1
6 5 4
Bottom View
1 GND 2 3
Pin 1 2,5 3 4 6
Description RF In A / VgA N/C RF In B / VgB RF Out B / VdB RF Out A / VdA
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
14
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April 11, 2006
Mechanical Drawing
0.175 1.825
TGA2602-SM
2.000 1.700
6 5 GND
1 2 3
1.650 1.000 0.350
0.300 0.000
4
0.000
0.600
1.400
Package dimensions are in mm. Unless otherwise specified, package tolerances are 0.050mm. Package Package Package Package Package Package Pad Pad Pad Pad Pad Pad #1 #2 #3 #4 #5 #6 RF In A / VgA N/C RF In B / VgB RF Out B / VdB N/C RF Out A / VdA 0.350 0.350 0.350 0.350 0.350 0.350 x x x x x x 0.250 0.250 0.250 0.250 0.250 0.250
2.000
15
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TGA2602-SM Single Channel 1950MHz Application Schematic
VG C7 C9 R1 L1 RF IN A RF IN B C1 C3 ML1 ML2 L2 C4 R2 VG C8 ML3 ML4 L4 R4 C10 C12 VD L3 C5 RF OUT A RF OUT B R3 C11 VD
C2
C6
Designator C1,C2 C3,C4 C5,C6,C9,C10 C7,C8,C11,C12 L1,L2 L3,L4 R1,R2 R3,R4
Designator ML1,ML2 ML3,ML4 Impedance 117 Ohm 82 Ohm
Component 22pF Capacitor 4.7pF Capacitor 10pF Capacitor 1uF Capacitor 22nH Inductor 47nH Inductor 2.2kOhm Resistor 10Ohm Resistor
Electrical Length @ 2GHz 14 degrees 3 degrees
16
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April 11, 2006
TGA2602-SM Single Channel 1950MHz Application Layout
17
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TGA2602-SM Balanced Amplifier Circuit Schematic
VG C7 C9 R1 L1 RF IN R5 X1 C1 C3 ML1 ML2 L2 C4 R2 VG C8 ML3 ML4 L4 R4 C10 C12 VD L3 C5 X2 R3 C11 VD
R6
C2
C6
RF OUT
Designator C1,C2 C3,C4 C5,C6,C9,C10 C7,C8,C11,C12 L1,L2 L3,L4 R1,R2 R3,R4 R5,R6
Component 22pF Capacitor 4.7pF Capacitor 10pF Capacitor 1uF Capacitor 22nH Inductor 47nH Inductor 2.2kOhm Resistor 10Ohm Resistor 50Ohm Resistor
900MHz Circuit
D esig n ato r X 1,X 2 C o m p o n en t A naren H ybrid P art N u m b er X C 0900A -03
Designator ML1,ML2 ML3,ML4
Impedance 96 Ohm 74 Ohm
Electrical Length @ 900MHz 35 degrees 8 degrees
1950MHz Circuit
D esig n ato r X 1,X 2 C o m p o n en t A naren H ybrid P art N u m b er X C 1900A -03
Designator ML1,ML2 ML3,ML4
Impedance 96 Ohm 74 Ohm
Electrical Length @ 2GHz 30 degrees 17 degrees
18
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April 11, 2006
900MHz Balanced Amplifier Layout
TGA2602-SM
19
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
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April 11, 2006
1950MHz Balanced Amplifier Layout
TGA2602-SM
20
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April 11, 2006
TGA2602-SM
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages. Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors' recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. This package has little tendency to self-align during reflow. Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile
Ramp-up Rate Activation Time and Temperature Time above Melting Point Max Peak Temperature Time within 5 C of Peak Temperature Ramp-down Rate
SnPb
3 C/sec 60 - 120 sec @ 140 - 160 C 60 - 150 sec 240 C 10 - 20 sec 4 - 6 C/sec
Pb Free
3 C/sec 60 - 180 sec @ 150 - 200 C 60 - 150 sec 260 C 10 - 20 sec 4 - 6 C/sec
Ordering Information
Part TGA2602-SM Package Style 2x2 6 Lead QFN
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
21
TriQuint Semiconductor Texas Phone: (972) 994-8465 Fax: (972) 994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

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